publication order number: ntf3055160/d ? semiconductor components industries, llc, 2001 july, 2001 rev. 0 1 NTF3055-160 preferred device power mosfet 2.0 amps, 60 volts nchannel sot223 designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 1.0 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs 20 30 vdc vpk drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 2.0 1.2 6.0 adc apk total power dissipation @ t a = 25 c (note 1.) total power dissipation @ t a = 25 c (note 2.) derate above 25 c p d 2.1 1.3 0.014 w w w/ c operating and storage temperature range t j , t stg 55 to 175 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 25 vdc, v gs = 10 vdc, i l (pk) = 6.0 apk, l = 10 mh, v ds = 60 vdc) e as 65 mj thermal resistance junction to ambient (note 1.) junction to ambient (note 2.) r q ja r q ja 72.3 114 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using 1 pad size, (cu. area 1.127 in 2 ). 2. when surface mounted to an fr4 board using minimum recommended pad size, 22.4 oz. (cu. area 0.272 in 2 ). d g s 1 2 3 4 2.0 amperes 60 volts r ds(on) = 160 m nchannel device package shipping ordering information ntf3055160t1 sot223 1000 tape & reel sot223 case 318e style 3 http://onsemi.com marking diagram 5160 5160 = device code l = location code ww = work week pin assignment 3 2 1 4 gate drain source drain ntf3055160t3 sot223 4000 tape & reel ntf3055160t3lf sot223 4000 tape & reel lww ( datasheet : )
ntf3055160 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 3.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 72 72 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 3.) gate threshold voltage (note 3.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 3.1 6.6 4.0 vdc mv/ c static draintosource onresistance (note 3.) (v gs = 10 vdc, i d = 1.0 adc) r ds(on) 142 160 m w static draintosource onresistance (note 3.) (v gs = 10 vdc, i d = 2.0 adc) (v gs = 10 vdc, i d = 1.0 adc, t j = 150 c) v ds(on) 0.142 0.270 0.384 vdc forward transconductance (note 3.) (v ds = 8.0 vdc, i d = 1.5 adc) g fs 1.8 mhos dynamic characteristics input capacitance (v 25 vd v 0 v c iss 200 280 pf output capacitance (v ds = 25 vdc, v gs = 0 v, f = 1.0 mhz ) c oss 68 100 transfer capacitance f = 1 . 0 mhz) c rss 26 40 switching characteristics (note 4.) turnon delay time t d(on) 9.2 20 ns rise time (v dd = 30 vdc, i d = 2.0 adc, v gs =10vdc t r 9.2 20 turnoff delay time v gs = 10 vdc, r g = 9.1 w ) (note 3.) t d(off) 16 40 fall time r g 9.1 w ) (note 3.) t f 9.2 20 gate charge (v 48 vd i 2 0 ad q t 6.9 14 nc (v ds = 48 vdc, i d = 2.0 adc, v gs = 10 vdc ) ( note 3. ) q 1 1.4 v gs = 10 vdc) (note 3 . ) q 2 3.0 sourcedrain diode characteristics forward onvoltage (i s = 2.0 adc, v gs = 0 vdc) (i s = 2.0 adc, v gs = 0 vdc, t j = 150 c) (note 3.) v sd 0.86 0.70 1.0 vdc reverse recovery time t rr 28.9 ns (i s = 2.0 adc, v gs = 0 vdc, t a 19.1 (i s 2 . 0 adc , v gs 0 vdc , di s /dt = 100 a/ m s) (note 3.) t b 9.8 reverse recovery stored charge q rr 0.030 m c 3. pulse test: pulse width 300 m s, duty cycle 2.0%. 4. switching characteristics are independent of operating junction temperatures.
ntf3055160 http://onsemi.com 3 0 0.5 2 3.5 2.5 1.5 134 figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance versus gatetosource voltage figure 4. onresistance versus drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current versus voltage v gs, gatetosource voltage (volts) i d, drain current (amps) t j = 25 c t j = 100 c t j = 55 c 0 0.28 0.24 0.2 0.16 0.12 0 0.5 2 3.5 i d, drain current (amps) r ds(on), draintosource resistance ( w ) i d, drain current (amps) r ds(on), draintosource resistance ( w ) v gs = 15 v 2 1.8 1.6 1.4 t j , junction temperature ( c) r ds(on), draintosource resistance (normalized) 50 50 25 0 25 75 125 100 i d = 1 a v gs = 10 v 0.8 0.6 150 1 10 1000 v ds, draintosource voltage (volts) i dss , leakage (na) 04060 30 20 10 50 100 2.5 1.5 0 0.8 2 2.8 1.6 0.8 v ds, draintosource voltage (volts) i d, drain current (amps) 0 0.4 3.6 v gs = 10 v v gs = 4.5 v v gs = 8 v v gs = 10 v v gs = 5 v 1.6 0.4 1.2 2 3 6.2 3.8 5.4 3.4 4.2 4.6 5 5.8 0.08 0.04 1 v gs, gatetosource voltage (volts) 1.2 1.2 0.8 2 0 2.8 1.6 0.4 1.2 0.28 0.24 0.2 0.16 0.12 0 0.08 0.04 1 175 v gs = 5.5 v t j = 150 c t j = 100 c t j = 25 c t j = 25 c t j = 100 c t j = 55 c v ds 10 v v gs = 0 v 2.4 2.4 3.2 2.8 v gs = 7 v v gs = 6 v 2.4 3 t j = 125 c 4
ntf3055160 http://onsemi.com 4 10 10 15 5 020 525 r ds(on) limit v gs 100 10 1 0.001 100 10 1 12 10 8 6 4 2 0 50 20 10 0 2 1.6 0 480 400 240 gatetosource or draintosource voltage (volts) c, capacitance (pf) 160 80 q g , total gate charge (nc) figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge v gs , gatetosource voltage (volts) figure 9. resistive switching time variation versus gate resistance r g , gate resistance ( w ) figure 10. diode forward voltage versus current v sd , sourcetodrain voltage (volts) i s , source current (amps) t, time (ns) figure 11. maximum rated forward biased safe operating area v ds , draintosource voltage (volts) figure 12. maximum avalanche energy versus starting junction temperature t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse draintosource avalanche energy (mj) 057 6 4 28 1 10 100 0.6 0.68 0.64 0.8 0.1 10 100 1 25 125 150 100 75 175 50 i d = 2 a t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss 1.2 0.72 0.76 c iss v gs = 20 v single pulse t c = 25 c v ds = 30 v i d = 2 a v gs = 10 v v gs = 0 v t j = 25 c i d = 6 a 1 ms 10 m s 10 ms dc t r t d(off) t d(on) v ds 0.88 0.1 30 40 q 2 q 1 q t 60 70 0 3 1 0.8 0.4 t f thermal limit package limit 320 560 0.84 0.01 100 m s
ntf3055160 http://onsemi.com 5 100 0.1 100 10 1 0.1 0.001 1000 r(t), effective transient thermal resistance (normalized) t, time (s) figure 13. thermal response 10 1 0.01 0.0001 0.00001 min pad 1 oz (cu area = 0.272 sq in) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 0.2 0.1 0.05 0.01 single pulse
ntf3055160 http://onsemi.com 6 package dimensions style 3: pin 1. gate 2. drain 3. source 4. drain h s f a b d g l 4 123 0.08 (0003) c m k j dim a min max min max millimeters 0.249 0.263 6.30 6.70 inches b 0.130 0.145 3.30 3.70 c 0.060 0.068 1.50 1.75 d 0.024 0.035 0.60 0.89 f 0.115 0.126 2.90 3.20 g 0.087 0.094 2.20 2.40 h 0.0008 0.0040 0.020 0.100 j 0.009 0.014 0.24 0.35 k 0.060 0.078 1.50 2.00 l 0.033 0.041 0.85 1.05 m 0 10 0 10 s 0.264 0.287 6.70 7.30 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. sot223 (to261) case 318e04 issue k
ntf3055160 http://onsemi.com 7 notes
ntf3055160 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntf3055160/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
|
